Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield

Table 1

DC data from simulation.

Shield structure	Off state breakdown voltage (V)	V ^th (V)	Rdson (ohm∗mm)	Idsat (A/mm)
Base line	72.05	1.361	13.083	0.184
Length of Gsh1 −0.2 µm	72.43	1.361	13.056	0.189
Length of Gsh1 +0.2 µm	70.97	1.361	13.106	0.18
Length of Gsh2 −0.2 µm	74.08	1.361	13.065	0.189
Length of Gsh2 +0.2 µm	67.49	1.361	13.099	0.18
Oxide thickness of Gsh1 −0.02 µm	70.37	1.361	13.295	0.172
Oxide thickness of Gsh1 +0.02 µm	72.53	1.361	12.943	0.193
Oxide thickness of Gsh2 −0.02 µm	69.84	1.361	13.092	0.182
Oxide thickness of Gsh2 +0.02 µm	72.39	1.361	13.077	0.185