Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield

Table 2

DC data from test key.

Shield structure	Breakdown voltage (V)	V ^th (V)	R dson (ohm∗mm)	I dsat (A/mm)
Base line	67.82	1.425	14.239	0.163
Length of Gsh1 −0.2 µm	67.94	1.411	14.342	0.164
Length of Gsh1 +0.2 µm	67.81	1.421	14.276	0.163
Length of Gsh2 −0.2 µm	68.01	1.412	14.238	0.167
Length of Gsh2 +0.2 µm	66.94	1.429	14.192	0.162
Oxide thickness of Gsh1 −0.02 µm	68.13	1.43	14.343	0.159
Oxide thickness of Gsh1 +0.02 µm	68.33	1.408	14.117	0.169
Oxide thickness of Gsh2 −0.02 µm	67.59	1.427	14.222	0.162
Oxide thickness of Gsh2 +0.02 µm	68.32	1.419	14.272	0.164