Journals
Publish with us
Publishing partnerships
About us
Blog
Active and Passive Electronic Components
Journal overview
For authors
For reviewers
For editors
Table of Contents
Special Issues
Active and Passive Electronic Components
/
2019
/
Article
/
Fig 1
/
Research Article
A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics
Figure 1
Structure of the AlGaAs/GaAs HEMT transistor.