A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics

Figure 2

Numerically calculated spatial distributions of the potential (a), the electron mobility (b), the electron temperature (c), the electrical field (d), the electron drift velocity (e)و and X- and -valley population ratio (f) within the channel with the different value of the drain voltage . The gate length and gate voltage are = 500 nm and = 0.5 V, respectively.

(a)

(b)

(c)

(d)

(e)

(f)