A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics

<div>Current-voltage characteristics of AlGaAs/GaAs HEMT with 500 nm gate length.</div>

Active and Passive Electronic Components

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Figure 3

Figure 3: A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics 

Figure 3 | A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics 