A Quasi-Two-Dimensional Physics-Based Model of HEMTs without Smoothing Functions for Joining Linear and Saturation Regions of I-V Characteristics

Table 1

List of parameters used in simulation [22].

Symbol	Physical meaning	Value	Unit
	The permittivity of the barrier layer	12.1	-
	The permittivity of free space	8.85 × 10^−12	F/m
	Elementary charge	1.62 × 10^−19	C
	The Boltzmann constant	1.38 × 10^−23	J/K
	The Planck constant	6.62 × 10^−34	J⋅s
	The room temperature	300	K
	The lattice temperature	300	K
	The parameter of band gap model	1.52	eV
	The parameter of band gap model	5.58 × 10^−4	eV/K
	The parameter of band gap model	220	K
	Electron mobility of highly doped GaAs at the -valley	800	cm^2/(V⋅s)
	Electron mobility of highly doped GaAs at the -valley	40	cm^2/(V⋅s)
	Lattice mobility ( = 300 K) for GaAs at the -valley	8500	cm^2/(V⋅s)
	Lattice mobility ( = 300 K) for GaAs at the -valley	410	cm^2/(V⋅s)
	Concentration of ionized impurity in the channel	1 × 10^14	cm^−3
	Temperature dependent fitting parameter	1 × 10^17	cm^−3
	Temperature dependent fitting parameter	0.5	-
	Fitting parameter	-2.2	-
	Fitting parameter	2	-
	The electrons saturating velocity in the -valley	2.5 × 10^7	cm/c
	The electrons saturating velocity in the -valley	0.9 × 10^7	cm/c
	The electronic gap between and X valleys	0.31	eV
	Energy relaxation model parameter for GaAs	0.48	ps
	Energy relaxation model parameter for GaAs	0.025	ps
	Energy relaxation model parameter for GaAs	-0.053	-
	Energy relaxation model parameter for GaAs	0.853	-
	Energy relaxation model parameter for GaAs	0.5	-
	The effective mass of electrons in -valley	5.92 × 10^−32	kg
	The effective mass of electrons in X-valley	4.29 × 10^−31	kg
	The effective mass of holes	4.19 × 10^−31	kg