The Design of an Ultralow-Power Ultra-wideband (5 GHz–10 GHz) Low Noise Amplifier in 0.13 μm CMOS Technology

Table 1

Performance summary and comparison with other state-of-the-art works.

	Tech	BW	Power	S21	NF	S11	IIP3	FOM
unit	μm	GHz	mW	dB	dB	dB	dBm
This work	0.13	5–10	0.963	13.82	1.46–2.27	<−11	−8	56
[22]	0.13	3.1–10.6	9	16.5	2–2.8	<−9.9	−5.1	13.75
[23]	0.13	1–10.6	26	16	2.3–4.5	<−12	2	4.55
[24]	0.13	2–9.6	19	11	3.6–4.8	<−8.3	−7.2	1.69
[25]	0.13	3–11	2.4	10	2.9–3.6	<−7.5	9.5	17.54
[26]	0.13	3.1–10.6	14.4	12.4	2.7–3.7	<−7.3	−3.8	3.8
[27]	0.09	0.02–2.3	18	21	1.4	<−10	−1.5	6.65
[28]	0.13	0.8–2	17.4	14.5	2.6	<−8.5	16	0.625
[29]	0.13	0.2–3.8	5.7	19	2.8–3.4	<−9	−4.2	6.67
[30]	0.065	0.2–5.2	21	13–15.6	<3.5	<−10	>0	1.24
[31]	0.13	0.1–2.1	3.11	19.2	2.4	−	9.6	35.1
[32]	0.13	3–12	8.5	13.5	4.3	<−11	−7	3.41
[33]	0.13	0.1–2.2	0.4	12.3	4.9	<−9	−10	17.9
[34]	0.09	0.1–7	0.75	12.6	5.5	−	−9	20.89
[35]	0.09	7.6	11.8	12.52	3–7	−9	−12	−