A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

Table 1

Four mainstream NVMs.

NVM	FERAM [1]	MRAM [2]	PCM [3]	RRAM [4]
Read speed	20–80 ns	3–20 ns	20–50 ns	10–50 ns
Write/erase speed	50/50 ns	3–20 ns	50/120 ns	10–50 ns
Resistance ratio	>8	2	>10	>10
Power consumption	Low	High	Low	Low
Supply voltage	2-3 V	3 V	1.5–3 V	1.5–3 V
Process compatibility	Incompatible	Low	High	High
Integration	Low	High	High	High