A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

<table class="table-group" id="tab2"><tr><td><table class="table"><tr><td class="thead-hr" colspan="6"><hr/></td></tr><tr class="thead"><td class="align_left"> </td><td class="align_center">MN1 (MN2)</td><td class="align_center">MP1 (MP2)</td><td class="align_center">MN3 (MN4)</td><td class="align_center">MN5 (MN6)</td><td class="align_center">RRAM1 (RRAM2)</td></tr><tr><td class="thead-hr" colspan="6"><hr/></td></tr><tr><td class="align_left"><i>W</i>/<i>L</i></td><td class="align_center">245/40</td><td class="align_center">100/45</td><td class="align_center">110/40</td><td class="align_center">245/40</td><td class="align_center">110/80</td></tr><tr><td class="align_left" colspan="6"><hr/></td></tr><tr><td class="align_left">CR ratio</td><td class="align_center" colspan="5">2.2</td></tr><tr><td class="align_left">PR ratio</td><td class="align_center" colspan="5">1.2</td></tr><tr class="table-tr"><td colspan="6"><hr class="tbody-hr"/></td></tr></table></td></tr></table>

<div>Device size of nvSRAM memory cell.</div>

Active and Passive Electronic Components

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Table 2

Table 2: A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node 