A 0.9 V, 8T2R nvSRAM Memory Cell with High Density and Improved Storage/Restoration Time in 28 nm Technology Node

Table 3

Performance comparison of different nvSRAM memory cells.

	This work	[7]	[9]	[18]	[19]
Memory cell	8T2R	8T2R	10T1R	7T1R	4T2R
Technology	28 nm CMOS	22 nm FDSOI	130 nm STM	90 nm CMOS	90 nm CMOS
Power supply	0.9 V	1 V	1.8 V	1 V	4 V
Restoration mode	Differential	Differential	Differential	Single	Differential
Nonvolatile mode	Before power failure	Before power failure	Before power failure	Before power failure	Real time
Store time	0.21 ns	0.24 ns	NA	10 ns (set + reset)	1.45 ns
Restoration time	0.18 ns	0.22 ns	NA	4 ns	0.02 ns
Current (when storing data)	0–200 μA	0–40 μA	0–50 μA	NA	0–230 μA
Voltage (when storing data)	1.6 V	1.0 V	1.8 V	1.5 V	1.5 V
Memory cell size	0.97 μm^2	5.44 μm^2	41 μm^2	1 μm^2	0.6 μm^2