Incoming Work-In-Progress Prediction in Semiconductor Fabrication Foundry Using Long Short-Term Memory

<div>Pearson’s <svg height="6.1673pt" id="M178" style="vertical-align:-0.2063904pt" version="1.1" viewbox="-0.0498162 -5.96091 5.60619 6.1673" width="5.60619pt" xmlns="http://www.w3.org/2000/svg" xmlns:xlink="http://www.w3.org/1999/xlink"><g transform="matrix(.013,0,0,-0.013,0,0)"><path d="M393 379C402 394 400 411 393 422C384 437 365 448 348 448C301 448 237 372 186 285H182L193 335C210 408 205 448 178 448C150 448 80 402 29 344L45 321C80 355 114 373 122 373C128 373 130 365 124 330C106 228 76 98 50 -5L57 -12C82 -5 112 3 132 6L172 203C196 256 234 304 254 329C275 355 293 367 306 367C318 367 330 360 342 348C347 343 355 343 365 350S386 367 393 379Z"></path></g></svg> for Fab method.</div>

Computational Intelligence and Neuroscience

tab14

Table 14

Table 14: Incoming Work-In-Progress Prediction in Semiconductor Fabrication Foundry Using Long Short-Term Memory 