Research Article

Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Figure 1

diagrams showing the (a) unipolar and (b) bipolar operation modes for ReRAM devices where no dependence of the “pinched hysteresis loops” to frequency is involved (DC conditions). The unipolar mode is able to promote resistive switching using a positive or negative polarity with and .
(a)
(b)