Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Figure 2

Process flow for fabrication of Al/Al₂O₃/Al stacked structures using a maximum temperature of 300°C, ideal for BEOL processing. Traverse cut of an ideal MIM device (where M1 = M2 = aluminum) as well as possible MIM arrays that could be densely integrated within the BEOL stages of an integrated circuit.