Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Figure 3

Electrical characteristics of MIS devices based on thinner Al₂O₃ = 6 nm and without thermal annealing. Outstanding uniformity is observed for both (a) - and (b) - data after testing at least 15 different MIS devices for each measurement. This confirms the good quality of ALD method for deposition of thin Al₂O₃.

(a) - data MIS devices

(b) - data MIS devices