(a) - data MIS devices
(b) - data MIS devices
Figure 3: Electrical characteristics of MIS devices based on thinner Al2O3 = 6 nm and without thermal annealing. Outstanding uniformity is observed for both (a) - and (b) - data after testing at least 15 different MIS devices for each measurement. This confirms the good quality of ALD method for deposition of thin Al2O3.