Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Figure 5

(a) Gate current versus stress time for Al/Al₂O₃/Al structure during the SET and RESET conditions. A gradual increase in g during the SET condition is evidence of positive charge trapping in the MIM device. Ideal energy band diagrams for the MIM structure under positive bias and where (b) PF tunneling conduction through is initiated; (c) a large density of trapped positive charge modifies the energy gap of Al₂O₃.

(a)

(b)

(c)