Research Article

Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments

Figure 6

Resistive switching for annealed Al/Al2O3 (10 nm)/Al stacked structures. (a) Bipolar mode with CC = 100 mA and (b) unipolar mode with μA. The ratio for these structures is 104–106 for both operation modes. For the unipolar mode, a decrease in is observed during continuous resistive switching.
(a)
(b)