Research Article
Understanding the Resistive Switching Phenomena of Stacked Al/Al2O3/Al Thin Films from the Dynamics of Conductive Filaments
Figure 6
Resistive switching for annealed Al/Al2O3 (10 nm)/Al stacked structures. (a) Bipolar mode with CC = 100 mA and (b) unipolar mode with μA. The ratio for these structures is 104–106 for both operation modes. For the unipolar mode, a decrease in is observed during continuous resistive switching.
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(b) |