Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Figure 7

(a) Proposed physical mechanism for the origin of single and/or multiple conductive filaments (CFs) for Al/Al₂O₃/Al structure during the SET process (depending on the current compliance limit) and the effect that partial dissolution of this previously formed CF has on the progressive reduction of . For larger CC, multiple formation of CFs should be expected, with their composition being mostly based on metal ions [M⁺]. (b) Average surface roughness of the BE (after AFM) showing large surface roughness which is close to the physical Al₂O₃ thickness of the MIM device. High surface roughness would promote local electric-field enhancements.

(a)

(b)