Understanding the Resistive Switching Phenomena of Stacked Al/Al₂O₃/Al Thin Films from the Dynamics of Conductive Filaments

Figure 9

Scanning electron microscopy image for Al/Al₂O₃/Si structure (Al₂O₃ = 20 nm, annealing in N₂ at 300°C) after FIB preparation of a traverse-cut face (using secondary electrons of an intralens detector for morphology imaging). A smooth transition between all materials is observed, while the polycrystalline nature of the metal electrode is also visible.