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Discrete Dynamics in Nature and Society
Volume 2015 (2015), Article ID 586842, 6 pages
http://dx.doi.org/10.1155/2015/586842
Research Article

Optimal Design of FPGA Switch Matrix with Ion Mobility Based Nonvolatile ReRAM

School of Computer Science and Technology, Zhoukou Normal University, Zhoukou 466001, China

Received 27 December 2014; Accepted 15 February 2015

Academic Editor: Zidong Wang

Copyright © 2015 Peng Hai-yun and Zhou Wen-gang. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. K. Zhang, S. Long, Q. Liu et al., “Progress in rectifying-based RRAM passive crossbar array,” Science China Technological Sciences, vol. 54, no. 4, pp. 811–818, 2011. View at Publisher · View at Google Scholar · View at Scopus
  2. D.-H. Kwon, K. M. Kim, J. H. Jang et al., “Atomic structure of conducting nanofilaments in TiO2 resistive switching memory,” Nature Nanotechnology, vol. 5, no. 2, pp. 148–153, 2010. View at Publisher · View at Google Scholar · View at Scopus
  3. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, “Memristive switching mechanism for metal/oxide/metal nanodevices,” Nature Nanotechnology, vol. 3, no. 11, pp. 429–433, 2008. View at Publisher · View at Google Scholar · View at Scopus
  4. E. Linn, R. Rosezin, C. Kügeler, and R. Waser, “Complementary resistive switches for passive nanocrossbar memories,” Nature Materials, vol. 9, no. 10, pp. 403–406, 2010. View at Publisher · View at Google Scholar · View at Scopus
  5. L. Chua and O. Leon, “Memristor—the missing circuit element,” IEEE Transactions on Circuit Theory, vol. 18, no. 5, pp. 507–519, 1971. View at Publisher · View at Google Scholar
  6. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature, vol. 453, no. 10, pp. 80–83, 2008. View at Google Scholar
  7. D. B. Strukov and R. S. Williams, “Exponential ionic drift: fast switching and low volatility of thin film memristors,” Applied Physics Letters, vol. 94, no. 3, pp. 515–519, 2009. View at Google Scholar
  8. S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, “Nanoscale memristor device as synapse in neuromorphic systems,” Nano Letters, vol. 10, no. 4, pp. 1297–1301, 2010. View at Publisher · View at Google Scholar · View at Scopus
  9. P. Sheridan, K.-H. Kim, S. Gaba, T. Chang, L. Chen, and W. Lu, “Device and SPICE modeling of RRAM devices,” Nanoscale, vol. 3, no. 9, pp. 3833–3840, 2011. View at Publisher · View at Google Scholar · View at Scopus
  10. Y. X. Deng, P. Huang, B. Chen et al., “RRAM crossbar array with cell selection device: a device and circuit interaction study,” IEEE Transactions on Electron Devices, vol. 60, no. 2, pp. 719–726, 2013. View at Publisher · View at Google Scholar · View at Scopus
  11. A. Ejnioui and N. Ranganathan, “Routing on field-programmable switch matrices,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 11, no. 2, pp. 283–287, 2003. View at Publisher · View at Google Scholar · View at Scopus
  12. J. Cong and B. Xiao, “FPGA-RPI: a novel fpga architecture with rram-based programmable interconnects,” IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 22, no. 4, pp. 864–877, 2014. View at Publisher · View at Google Scholar · View at Scopus
  13. A. M. Smith, G. A. Constantinides, and P. Y. K. Cheung, “FPGA architecture optimization using geometric programming,” IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol. 29, no. 8, pp. 1163–1176, 2010. View at Publisher · View at Google Scholar · View at Scopus