Full-Wave Analysis of Traveling-Wave Field-Effect Transistors Using Finite-Difference Time-Domain Method

Table 1

Line parameters of test TWFET.

𝐶gs	0.10 pF/mm	𝐿g	0.73 nH/mm
𝐶gd	0.17 pF/mm	𝐿d	0.70 nH/mm
𝐶ds	0.09 pF/mm	𝐿𝑚	0.42 nH/mm