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International Journal of Antennas and Propagation
Volume 2014, Article ID 471935, 9 pages
http://dx.doi.org/10.1155/2014/471935
Research Article

Fabrication of a 77 GHz Rotman Lens on a High Resistivity Silicon Wafer Using Lift-Off Process

Department of Electrical and Computer Engineering, University of Windsor, CEI 401 Sunset Avenue, Windsor, ON, Canada N9B 3P4

Received 4 December 2013; Accepted 4 April 2014; Published 4 May 2014

Academic Editor: Young Joong Yoon

Copyright © 2014 Ali Attaran and Sazzadur Chowdhury. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Fabrication of a high resistivity silicon based microstrip Rotman lens using a lift-off process has been presented. The lens features 3 beam ports, 5 array ports, 16 dummy ports, and beam steering angles of ±10 degrees. The lens was fabricated on a 200  m thick high resistivity silicon wafer and has a footprint area of 19.7 mm × 15.6 mm. The lens was tested as an integral part of a 77 GHz radar where a tunable X band source along with an 8 times multiplier was used as the RF source and the resulting millimeter wave signal centered at 77 GHz was radiated through a lens-antenna combination. A horn antenna with a downconverter harmonic mixer was used to receive the radiated signal and display the received signal in an Advantest R3271A spectrum analyzer. The superimposed transmit and receive signal in the spectrum analyzer showed the proper radar operation confirming the Rotman lens design.