Taming the Electromagnetic Boundaries via Metasurfaces: From Theory and Fabrication to Functional Devices

Figure 23

(a) Schematic view of the three-slit structure under study. (b) and (c) The FDTD simulation of electric field intensity time-average distribution of beam focusing with a five-slit metallic lens. (d) A semiconductor-insulator-semiconductor structure in a Voigt configuration. The propagation mode is TM polarized, and the magnetic field is applied along the -axis. The thickness of the insulator is denoted by . (e) FDTD-calculated focal length when the external magnetic field is increased from 0 to 1 T. Figures are reproduced from (a)–(c) [139] and (d, e) [140].

(a)

(b)

(c)

(d)

(e)