Research Article
Modeling and Electromagnetic Analysis of Multilayer Through Silicon Via Interconnect for 3D Integration
Table 1
Parameters of proposed model.
| Parameter | Symbol | Value |
| TSV height | | 100 μm | TSV radius | | 10 μm | SiO2 thickness | | 0.6 μm | TSV-TSV pitch | | 40 μm | Bump radius | | 15 μm | Bump height | | 5 μm | SiO2 plane thickness | | 1 μm |
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