Design of Active Frequency Selective Surface with Curved Composite Structures and Tunable Frequency Response

Table 3

Comparison between the proposed AFSS and related studies.

Study	Technique	Bias circuit configuration	Operating freq. (GHz)	Stability
				Polarization	Angle
[7]	PIN diode	Two-inductor bias	2.5–5.0	TE and TM	0–45°
[8]	Varactor	Bias grid with inductive pad	8.0–10.0	TE	0–45°
[9]	PIN diode	Two-inductor bias	1.8–2.5	TE	—
[10]	PIN diode	One parallel bias	10.0–12.0	TE	—
[11]	PIN diode	One series bias with 3 inductors, 1 resistor	4.0–8.0	TE	—
[12]	PIN diode	One parallel bias	1.0–12.0	TE	—
[13]	PIN diode	One series bias with 3 inductors	1.5–8.0	TE	0–45°
This study	PIN diode	One parallel bias	5.7–9.8	TE and TM	0–30°