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International Journal of Corrosion
Volume 2014, Article ID 565109, 8 pages
Research Article

Effect of C/Si Ratio on the Electrochemical Behavior of a-SiCx:H Coatings on SS301 Substrate Deposited by PECVD

1Department of Mining and Materials Engineering, McGill University, 3610 University Street, Montreal, QC, Canada H3A 2B2
2Department of Engineering Physics, Ecole Polytechnique, C.P. 6079, Succ. Centre Ville, Montreal, QC, Canada H3C 3A7

Received 25 November 2013; Revised 19 January 2014; Accepted 20 January 2014; Published 5 March 2014

Academic Editor: Flavio Deflorian

Copyright © 2014 D. Li et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Amorphous hydrogenated silicon carbide (a-SiCx:H) coatings were deposited on stainless steel 301 (SS301) using plasma enhanced chemical vapor deposition with the methane gas flow ranging from 30 to 90 sccm. XRD spectra confirmed the amorphous structure of these coatings. The as-deposited coatings all exhibited homogenous dense feature, and no porosities were observed in SEM and AFM analysis. The a-SiCx:H coatings remarkably increased the corrosion resistance of the SS301 substrate. With the increase of the C concentration, the a-SiCx:H coatings exhibited significantly enhanced electrochemical behavior. The a-SiCx:H coating with the highest carbon concentration acted as an excellent barrier to charge transfer, with a corrosion current of  A/cm2 and a breakdown voltage of 1.36 V, compared to  A/cm2 and 0.34 V for the SS301 substrate.