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International Journal of Electrochemistry
Volume 2012 (2012), Article ID 271285, 7 pages
Review Article

Diverse Role of Silicon Carbide in the Domain of Nanomaterials

1Department of Physics, Ramananda College, Bishnupur, West Bengal, Bankura 713104, India
2Department of Physics, The University of Burdwan, Golapbag, West Bengal, Burdwan 722122, India
3Department of Spectroscopy, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700032, India

Received 16 February 2012; Accepted 9 June 2012

Academic Editor: Ujjal Kumar Sur

Copyright © 2012 T. Sahu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Silicon carbide (SiC) is a promising material due to its unique property to adopt different crystalline polytypes which monitor the band gap and the electronic and optical properties. Despite being an indirect band gap semiconductor, SiC is used in several high-performance electronic and optical devices. SiC has been long recognized as one of the best biocompatible materials, especially in cardiovascular and blood-contacting implants and biomedical devices. In this paper, diverse role of SiC in its nanostructured form has been discussed. It is felt that further experimental and theoretical work would help to better understanding of the various properties of these nanostructures in order to realize their full potentials.