Controllable Electrochemical Activities by Oxidative Treatment toward Inner-Sphere Redox Systems at N-Doped Hydrogenated Amorphous Carbon Films

<table>XPS C 1s spectrum for (a) H-BDD, (b) O-BDD, (c) AD-DLC, (d) O-DLC, (e) GC, and (f) O-GC, together with the Lorentzian fit line. Sweep rate, 1 eV min<sup>−1</sup>.</table>

International Journal of Electrochemistry

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Figure 1

Figure 1: Controllable Electrochemical Activities by Oxidative Treatment toward Inner-Sphere Redox Systems at N-Doped Hydrogenated Amorphous Carbon Films 

Figure 1 | Controllable Electrochemical Activities by Oxidative Treatment toward Inner-Sphere Redox Systems at N-Doped Hydrogenated Amorphous Carbon Films 