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Research Letters in Optics
Volume 2008, Article ID 865092, 5 pages
Research Letter

High-Power Hybrid Mode-Locked External Cavity Semiconductor Laser Using Tapered Amplifier with Large Tunability

Department of Physics and Astronomy and Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106, USA

Received 4 April 2008; Accepted 17 June 2008

Academic Editor: John McInerney

Copyright © 2008 Andreas Schmitt-Sody et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We report on hybrid mode-locked laser operation of a tapered semiconductor amplifier in an external ring cavity, generating pulses as short as 0.5 ps at 88.1 MHz with an average power of 60 mW. The mode locking is achieved through a combination of a multiple quantum well saturable absorber (>10% modulation depth) and an RF current modulation. This designed laser has 20 nm tuning bandwidth in continuous wave and 10 nm tuning bandwidth in mode locking around 786 nm center wavelength at constant temperature.