International Journal of Optics / 2011 / Article / Fig 4

Research Article

Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure

Figure 4

PL spectra of three n-type Si substrates (A–C) at room temperature. Substrates A and B have a SiO2 layer on the surfaces with nominal thickness of 0 and 1.5 nm, respectively, and substrate C is that of B after thermally treated at 820°C for 1 hour in an Ar atmosphere.

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