Efficient Silicon Light-Emitting-Diodes with a p-Si/Ultrathin SiO2/n-Si Structure
Figure 4
PL spectra of three n-type Si substrates (A–C) at room temperature. Substrates A and B have a SiO2 layer on the surfaces with nominal thickness of 0 and 1.5 nm, respectively, and substrate C is that of B after thermally treated at 820°C for 1 hour in an Ar atmosphere.
