Table of Contents Author Guidelines Submit a Manuscript
International Journal of Optics
Volume 2012, Article ID 505023, 16 pages
Review Article

Deep Level Saturation Spectroscopy

Semiconductors Physics Department Institute of Applied Research, Vilnius University, 10222 Vilnius, Lithuania

Received 31 October 2011; Revised 14 December 2011; Accepted 23 December 2011

Academic Editor: Randy A. Bartels

Copyright © 2012 Vladimir Gavryushin. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Citations to this Article [1 citation]

The following is the list of published articles that have cited the current article.

  • Clément Potier, Piero Gamarra, Sylvain L. Delage, Christian Dua, Michel Campovecchio, Mourad Oualli, Raphaël Aubry, Olivier Patard, Marie-Antoinette Di Forte-Poisson, Raymond Quéré, Jean-Claude Jacquet, Audrey Martin, Olivier Jardel, Stéphane Piotrowicz, and Sylvain Laurent, “Highlighting trapping phenomena in microwave GaN HEMTs by low-frequency S-parameters,” International Journal of Microwave and Wireless Technologies, vol. 7, no. 3-4, pp. 287–296, 2015. View at Publisher · View at Google Scholar