Detailed Theoretical Model for Adjustable Gain-Clamped Semiconductor Optical Amplifier

Table 1

Device parameters used in AGC-SOA simulation.

Symbol	Parameters	SOA1	SOA2
𝐿𝑐	Central active region length	400 μm	840 μm
𝐿𝑡	Tapered active region length	200 μm	160 μm
𝑑	Active region thickness	0.4 μm	0.1 μm
𝑊	Active region width	0.4 μm	1.1 μm
𝑦	Molar fraction of arsenide	0.892	0.816
Γ	Confinement factor	0.15	0.15
𝑅1	Input facet reflectivity	5×10^−5	1×10^−5
𝑅2	Output facet reflectivity	5×10^−5	1×10^−5
𝜂in	Input coupling loss	3 dB	2 dB
𝜂out	Output coupling loss	3 dB	2 dB
𝐾0	Carrier-independent absorption loss coefficient	6200 m^−1	3000 m^−1
𝐾1	Carrier-dependent absorption loss coefficient	7.5×10^−21m^2	6.83×10^−21m^2
𝑛1	Active region refractive index	3.22	3.56
𝐶1	Recombination coefficients	3.7×10^8s^−1
𝐶2		5.6×10^−16 m^3/s
𝐶3		3×10^−41 m^6/s
𝛼coupler	WDM coupler pass band insertion loss	0.5 dB