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International Journal of Optics
Volume 2012 (2012), Article ID 803797, 6 pages
http://dx.doi.org/10.1155/2012/803797
Research Article

Synthesis, Growth, and Electrical Transport Properties of Pure and L i S O 4 -Doped Triglycine Sulphate Crystal

Department of Physics, Bangladesh University of Engineering and Technology, Dhaka 1000, Bangladesh

Received 31 October 2011; Revised 4 January 2012; Accepted 5 January 2012

Academic Editor: Dragomir Neshev

Copyright © 2012 Farhana Khanum and Jiban Podder. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

Pure triglycine sulphate (TGS) and LiSO4-doped TGS crystals were grown from aqueous solution by natural evaporation method. The grown crystals were characterized by UV-vis spectroscopy, electrical conductivity ( 𝜎 d c ) measurement, dielectric studies, microhardness, and thermogravimetry/differential thermal analysis. Pure TGS and LiSO4-doped TGS crystals were found highly transparent and full faced. The direct current conductivity is found to increase with temperature as well as dopant concentrations. Curie temperature remains the same for pure and doped crystals, but dielectric constant and dielectric loss increase with dopant concentration. The Vicker’s microhardness of the LiSO4-doped TGS crystals along (001) face is found higher than that of pure TGS crystals. Etching studies illustrate the quality of the doped crystal. The experimental results evidence the suitability of the grown crystal for optoelectronic applications.