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International Journal of Optics
Volume 2013, Article ID 756402, 9 pages
Research Article

Preparation and Characterization of (Au/n-Sn /Si /Si/Al) MIS Device for Optoelectronic Application

1Department of Physics, College of Science, Al Mustansiriyah University, Baghdad, Iraq
2Laser and Optoelectronic Branch, School of Applied Sciences, University of Technology, Baghdad, Iraq

Received 5 April 2013; Revised 18 September 2013; Accepted 19 September 2013

Academic Editor: Yu S. Kivshar

Copyright © 2013 Marwa Abdul Muhsien et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


SnO2 thin films were prepared by using rapid thermal oxidation (RTO) of Sn at oxidation temperature 873 K and oxidation time 90 sec on semiconductor n-type and p-type silicon substrate. In order to characterize the prepared device, the electrical properties have been measured which revealed that the barrier height is greatly depended on interfacial layer thickness (SiO2). The value of peak response (n-SnO2/SiO2/n-Si) device was 0.16 A/W which is greater than that of (n-SnO2/SiO2/p-Si) device whose value was 0.12 A/W, while the rise time was found to be shorter.