Preparation and Characterization of (Au/n-Sn<svg     style="vertical-align:-4.32007pt;width:25.025px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 25.025 20.4125" width="25.025"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,14.975)"><path id="x4F" d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" /></g>

			<g transform="matrix(.016,-0,0,-.016,16.813,20.35)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g>

		
	
</svg>/Si<svg     style="vertical-align:-4.32007pt;width:25.025px;" id="M2" height="20.4125" version="1.1" viewBox="0 0 25.025 20.4125" width="25.025"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,14.975)"><use xlink:href="#x4F"/></g>

			<g transform="matrix(.016,-0,0,-.016,16.813,20.35)"><use xlink:href="#x32"/></g>

		
	
</svg>/Si/Al) MIS Device for Optoelectronic Application

<table>Short-circuit current as a function of the incident photo energy. (a) (n-SnO<sub>2</sub>/SiO<sub>2</sub>/n-Si) device, (b) (n-SnO<sub>2</sub>/SiO<sub>2</sub>/p-Si) device.</table>

International Journal of Optics

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Figure 6

Figure 6: Preparation and Characterization of (Au/n-Sn<svg     style="vertical-align:-4.32007pt;width:25.025px;" id="M1" height="20.4125" version="1.1" viewBox="0 0 25.025 20.4125" width="25.025"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,14.975)"><path id="x4F" d="M381 665q131 0 226.5 -93t95.5 -239q0 -158 -96 -253t-238 -95q-137 0 -231 95t-94 238q0 142 92.5 244.5t244.5 102.5zM359 629q-89 0 -151 -74.5t-62 -208.5q0 -141 69 -233t175 -92q90 0 150.5 74t60.5 211q0 152 -69 237.5t-173 85.5z" /></g>

			<g transform="matrix(.016,-0,0,-.016,16.813,20.35)"><path id="x32" d="M412 140l28 -9q0 -2 -35 -131h-373v23q112 112 161 170q59 70 92 127t33 115q0 63 -31 98t-86 35q-75 0 -137 -93l-22 20l57 81q55 59 135 59q69 0 118.5 -46.5t49.5 -122.5q0 -62 -29.5 -114t-102.5 -130l-141 -149h186q42 0 58.5 10.5t38.5 56.5z" /></g>

		
	
</svg>/Si<svg     style="vertical-align:-4.32007pt;width:25.025px;" id="M2" height="20.4125" version="1.1" viewBox="0 0 25.025 20.4125" width="25.025"  xmlns:xlink="http://www.w3.org/1999/xlink" xmlns="http://www.w3.org/2000/svg">
	
		
			<g transform="matrix(.022,-0,0,-.022,.062,14.975)"><use xlink:href="#x4F"/></g>

			<g transform="matrix(.016,-0,0,-.016,16.813,20.35)"><use xlink:href="#x32"/></g>

		
	
</svg>/Si/Al) MIS Device for Optoelectronic Application 

International Journal of Optics

Preparation and Characterization of (Au/n-Sn /Si /Si/Al) MIS Device for Optoelectronic Application

Figure 6

Preparation and Characterization of (Au/n-Sn/Si/Si/Al) MIS Device for Optoelectronic Application