Preparation and Characterization of (Au/n-SnO₂/SiO₂/Si/Al) MIS Device for Optoelectronic Application

Table 1

The obtained results from the minority carrier life time.

Device type	ℓ𝑒  ℓℎ (cm)	𝜏𝑒  𝜏ℎ (𝜇sec)
n-SnO2/SiO2/n-Si	2∗10^−2	61.8
n-SnO2/SiO2/p-Si	4∗10^−2	53