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International Journal of Optics
Volume 2017, Article ID 7280613, 8 pages
Research Article

Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

1Atomic and Molecular Physics Department, Faculty of Physics, University of Tabriz, Tabriz, Iran
2Mechanical Engineering Department, Sharif University of Technology, Tehran, Iran
3Physics Department, Faculty of Sciences, Urmia University, Urmia, Iran

Correspondence should be addressed to Mahshid Mokhtarnejad; moc.liamg@dajenrathkom.dihsham

Received 21 October 2016; Revised 8 February 2017; Accepted 5 April 2017; Published 13 June 2017

Academic Editor: Giulio Cerullo

Copyright © 2017 Mahshid Mokhtarnejad et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the one-dimensional photonic crystal, the optical stark effect (OSE) was considered on it. Due to the OSE on virtual exciton levels, the switching time can be in the order of picoseconds. Moreover, it is demonstrated that, by introducing errors in width of barrier and well as well as by inserting defect, the reflectivity is reduced. Thus, by employing the mechanism of stark effect MQWs band-gaps can be easily controlled which is useful in designing MWQ based optical switches and filters. By comparing the results, we observe that the reflectivity of MWQ containing 200 periods of InAlAs/InP quantum wells shows the maximum reflectivity of 96%.