Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells

Figure 6

(a) Reflectivity of 200-periodic InGaAs/InP quantum well for (solid line), (dashed line), and (dashed-dot line). (b) Effect of width error in the switch performance. The solid line shows the reflectivity with no error. The dashed line shows 1 nm error of both quantum barrier and well width on the reflectivity. Dashed-dot line shows 2 nm error of quantum barrier and well width on the reflectivity. (b) illustrates the effect of 1 nm and 2 nm width errors showed by dashed and dashed-dotted lines, respectively, on the reflectivity of InGaAs/InP MQW in normal incident. Resultantly, we see that even 1 nm width error causes a shift from resonance frequency and the reflection will also be suppressed slightly. Besides, 2 nm width error on the quantum barrier and well width results in a significant impact on the switch performance and the system will completely be suppressed.

(a)

(b)