Photoelectrochemical Characterization of Sprayed 𝛼-Fe₂O₃ Thin Films: Influence of Si Doping and SnO₂ Interfacial Layer

Figure 3

Mott-Schottky measurement of Fe₂O₃ films (a) undoped, measured at 30 kHz and (b) doped with 0.9% Si, measured at 1 kHz. The frequency was selected based on the impedance spectra (not shown), in the range where the slope of 20 versus 1.3×10⁵ is close to 𝐶_sc, and the real part of impedance is more or less constant [21].

(a)

(b)