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International Journal of Photoenergy
Volume 2009 (2009), Article ID 374301, 7 pages
http://dx.doi.org/10.1155/2009/374301
Research Article

Impedance and Interface Properties of Al/Methyl-Red/p-InP Solar Cell

Department of Physics, Science and Art Faculty, Batman University, 72060 Batman, Turkey

Received 17 April 2009; Accepted 8 July 2009

Academic Editor: Fahrettin Yakuphanoglu

Copyright © 2009 Ömer Güllü. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Linked References

  1. J. Lee, S. S. Kim, K. Kim, J. H. Kim, and S. Im, “Correlation between photoelectric and optical absorption spectra of thermally evaporated pentacene films,” Applied Physics Letters, vol. 84, no. 10, pp. 1701–1703, 2004. View at Google Scholar
  2. T. Kurata, H. Koezuka, S. Tsunoda, and T. Ando, “Metal/conductive-polymer junction: an In/poly(N-methylpyrrole) diode with a tunnel Schottky junction,” Journal of Physics D, vol. 19, no. 4, pp. L57–L60, 1986. View at Publisher · View at Google Scholar
  3. K. Tada, M. Wada, and M. Onoda, “A polymer Schottky diode carrying a chimney for selective doping,” Journal of Physics D, vol. 36, no. 17, pp. L70–L73, 2003. View at Publisher · View at Google Scholar
  4. F. Yakuphanoglu, “Electronic and photovoltaic properties of Al/p-Si/copper phthalocyanine photodiode junction barrier,” Solar Energy Materials and Solar Cells, vol. 91, no. 13, pp. 1182–1186, 2007. View at Publisher · View at Google Scholar
  5. B. Johnev and K. Fostiropoulos, “Zinc-phthalocyaninetetraphosphonic acid as a novel transparent-conducting-oxide passivation for organic photovoltaic devices,” Solar Energy Materials and Solar Cells, vol. 92, no. 4, pp. 393–396, 2008. View at Publisher · View at Google Scholar
  6. A. Türüt and F. Koleli, “Semiconductive polymer-based Schottky diode,” Journal of Applied Physics, vol. 72, no. 2, pp. 818–819, 1992. View at Publisher · View at Google Scholar
  7. S. Aydogan, M. Saglam, and A. Türüt, “The temperature dependence of current-voltage characteristics of the Au/Polypyrrole/p-Si/Al heterojunctions,” Journal of Physics Condensed Matter, vol. 18, no. 9, pp. 2665–2676, 2006. View at Publisher · View at Google Scholar
  8. Ö. Güllü, A. Türüt, and S. Asubay, “Electrical characterization of organic-on-inorganic semiconductor Schottky structures,” Journal of Physics: Condensed Matter, vol. 20, no. 4, Article ID 045215, 2008. View at Publisher · View at Google Scholar
  9. S. R. Forrest and P. H. Schmidt, “Semiconductor analysis using organic-on-inorganic contact barriers. I. Theory of the effects of surface states on diode potential and ac admittance,” Journal of Applied Physics, vol. 59, no. 2, pp. 513–525, 1986. View at Publisher · View at Google Scholar
  10. S. R. Forrest, M. L. Kaplan, and P. H. Schmidt, “Semiconductor analysis using organic-on-inorganic contact barriers. II. Application to InP-based compound semiconductors,” Journal of Applied Physics, vol. 60, no. 7, pp. 2406–2418, 1986. View at Publisher · View at Google Scholar
  11. M. Çakar, C. Temirci, and A. Türüt, “The Schottky barrier height of the rectifying Cu/pyronine-B/p-Si, Au/pyronine-B/p-Si, Sn/pyronine-B/p-Si and Al/pyronine-B/p-Si contacts,” Synthetic Metals, vol. 142, no. 1–3, pp. 177–180, 2004. View at Publisher · View at Google Scholar
  12. M. A. Ebeoglu, T. Kilicoglu, and M. E. Aydin, “Low- and high-frequency C-V characteristics of the contacts formed by adding a solution of the nonpolymeric organic compound on p-type Si substrate,” Physica B, vol. 395, no. 1-2, pp. 93–97, 2007. View at Publisher · View at Google Scholar
  13. M. M. El-Nahass, K. F. Abd-El-Rahman, A. A. M. Farag, and A. A. A. Darwish, “Photovoltaic properties of NiPc/p-Si (organic/inorganic) heterojunctions,” Organic Electronics: Physics, Materials, Applications, vol. 6, no. 3, pp. 129–136, 2005. View at Publisher · View at Google Scholar
  14. M. M. El-Nahass, H. M. Zeyada, K. F. Abd-El-Rahman, and A. A. A. Darwish, “Fabrication and characterization of 4-tricyanovinyl-N,N-diethylaniline/p-silicon hybrid organic-inorganic solar cells,” Solar Energy Materials and Solar Cells, vol. 91, no. 12, pp. 1120–1126, 2007. View at Publisher · View at Google Scholar
  15. T. Kampen, A. Schuller, D. R. T. Zahn et al., “Schottky contacts on passivated GaAs(100) surfaces: barrier height and reactivity,” Applied Surface Science, vol. 234, no. 1–4, pp. 341–348, 2004. View at Publisher · View at Google Scholar
  16. D. R. T. Zahn, T. U. Kampen, and H. Mendez, “Transport gap of organic semiconductors in organic modified Schottky contacts,” Applied Surface Science, vol. 212-213, pp. 423–427, 2003. View at Publisher · View at Google Scholar
  17. A. R. Vearey-Roberts and D. A. Evans, “Modification of GaAs Schottky diodes by thin organic interlayers,” Applied Physics Letters, vol. 86, no. 7, Article ID 072105, 3 pages, 2005. View at Publisher · View at Google Scholar
  18. A. Bolognesi, A. Di Carlo, P. Lugli, T. Kampen, and D. R. T. Zahn, “Experimental investigation and simulation of hybrid organic/inorganic Schottky diodes,” Journal of Physics: Condensed Matter, vol. 15, no. 38, pp. S2719–S2728, 2003. View at Publisher · View at Google Scholar
  19. T. U. Kampen, S. Park, and D. R. T. Zahn, “Barrier height engineering of Ag/GaAs(100) Schottky contacts by a thin organic interlayer,” Applied Surface Science, vol. 190, no. 1–4, pp. 461–466, 2002. View at Publisher · View at Google Scholar
  20. C. H. Chen and I. Shih, “Hybrid organic on inorganic semiconductor heterojunction,” Journal of Materials Science: Materials in Electronics, vol. 17, no. 12, pp. 1047–1053, 2006. View at Publisher · View at Google Scholar
  21. R. K. Gupta and R. A. Singh, “Junction properties of Schottky diode based on composite organic semiconductors: polyaniline-polystyrene system,” Journal of Polymer Research, vol. 11, no. 4, pp. 269–273, 2005. View at Publisher · View at Google Scholar
  22. T. Kilicoglu, M. E. Aydin, and Y. S. Ocak, “The determination of the interface state density distribution of the Al/methyl-red/p-Si Schottky barrier diode by using a capacitance method,” Physica B, vol. 388, no. 1-2, pp. 244–248, 2007. View at Publisher · View at Google Scholar
  23. M. E. Aydin and A. Türüt, “The electrical characteristics of Sn/methyl-red/p-type Si/Al contacts,” Microelectronic Engineering, vol. 84, no. 12, pp. 2875–2882, 2007. View at Publisher · View at Google Scholar
  24. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, Clarendon, Oxford, UK, 2nd edition, 1988.
  25. S. M. Sze, Physics of Semiconductor Devices, John Wiley & Sons, New York, NY, USA, 2nd edition, 1981.
  26. R. F. Schmitsdorf, T. U. Kampen, and W. Monch, “Explanation of the linear correlation between barrier heights and ideality factors of real metal-semiconductor contacts by laterally nonuniform Schottky barriers,” Journal of Vacuum Science and Technology B, vol. 15, no. 4, pp. 1221–1226, 1997. View at Google Scholar
  27. W. Monch, “Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities,” Journal of Vacuum Science and Technology B, vol. 17, no. 4, pp. 1867–1876, 1999. View at Google Scholar
  28. R. T. Tung, “Electron transport at metal-semiconductor interfaces: general theory,” Physical Review B, vol. 45, no. 23, pp. 13509–13523, 1992. View at Publisher · View at Google Scholar
  29. G. M. Vanalme, L. Goubertt, R. L. Van Meirhaeghe, F. Cardon, and P. Van Daele, “Ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments,” Semiconductor Science and Technology, vol. 14, no. 9, pp. 871–877, 1999. View at Publisher · View at Google Scholar
  30. M. Çakar, N. Yildirim, Ş. Karataş, C. Temirci, and A. Türüt, “Current-voltage and capacitance-voltage characteristics of Sn/rhodamine- 101n-Si and Sn/rhodamine- 101p-Si Schottky barrier diodes,” Journal of Applied Physics, vol. 100, no. 7, Article ID 074505, 2006. View at Publisher · View at Google Scholar
  31. S. Antohe, “Electrical and photoelectrical properties of the single-, and multilayer organic photovoltaic cells,” Journal of Optoelectronics and Advanced Materials, vol. 2, no. 5, pp. 498–514, 2000. View at Google Scholar
  32. N. Camaioni, G. Casalbore-Miceli, G. Beggiato, M. Cristani, and C. Summonte, “Photoelectrical characterization of Schottky junctions between poly(4h-cyclopenta[2,1-b:3,4-b]dithiophene) and aluminum: effect of hexadecyl groups in 4 position,” Thin Solid Films, vol. 366, no. 1-2, pp. 211–215, 2000. View at Publisher · View at Google Scholar
  33. J. H. Werner and H. H. Guttler, “Barrier inhomogeneities at Schottky contacts,” Journal of Applied Physics, vol. 69, no. 3, pp. 1522–1533, 1991. View at Publisher · View at Google Scholar
  34. H. C. Card and E. H. Rhoderick, “Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes,” Journal of Physics D, vol. 4, no. 10, pp. 1589–1601, 1971. View at Publisher · View at Google Scholar
  35. E. H. Nicollian and A. Goetzberger, “The Si-SiO2 interface—electrical properties as determined by the metal-insulator-silicon conductance technique,” Bell System Technical Journal, vol. 46, pp. 1055–1163, 1967. View at Google Scholar
  36. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology, John Wiley & Sons, New York, NY, USA, 1982.
  37. J. Fernandez, P. Godignon, S. Berberich, J. Rebollo, G. Brezeanu, and J. Millan, “High frequency characteristics and modelling of P-type 6H-silicon carbide MOS structures,” Solid-State Electronics, vol. 39, no. 9, pp. 1359–1364, 1996. View at Publisher · View at Google Scholar
  38. M. Biber, M. Çakar, and A. Türüt, “The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes,” Journal of Materials Science: Materials in Electronics, vol. 12, no. 10, pp. 575–579, 2001. View at Publisher · View at Google Scholar
  39. M. E. Yacoubi, R. Evrard, N. D. Nguyen, and M. Schmeits, “Electrical conduction by interface states in semiconductor heterojunctions,” Semiconductor Science and Technology, vol. 15, no. 4, pp. 341–348, 2000. View at Publisher · View at Google Scholar
  40. E. K. Evangelou, N. Konofaos, M. R. Craven, W. M. Cranton, and C. B. Thomas, “Characterization of the BaTiO3/p-Si interface and applications,” Applied Surface Science, vol. 166, no. 1, pp. 504–507, 2000. View at Publisher · View at Google Scholar
  41. O. L. Blajiev, T. Breugelmans, R. Pintelon, and A. Hubin, “Improvement of the impedance measurement reliability by some new experimental and data treatment procedures applied to the behavior of copper in neutral chloride solutions containing small heterocycle molecules,” Electrochimica Acta, vol. 51, no. 8-9, pp. 1403–1412, 2006. View at Publisher · View at Google Scholar
  42. N. Konofaos and E. K. Evangelou, “Electrical characterization of the SiON/Si interface for applications on optical and MOS devices,” Semiconductor Science and Technology, vol. 18, no. 1, pp. 56–59, 2003. View at Publisher · View at Google Scholar
  43. S. Kochowski, B. Paszkiewicz, and R. Paszkiewicz, “Some effects of (NH4)2Sx treatment of n-GaAs surface on electrical characteristics of metal-SiO2-GaAs structures,” Vacuum, vol. 57, no. 2, pp. 157–162, 2000. View at Publisher · View at Google Scholar
  44. M. C. Lonergan and F. E. Jones, “Calculation of transmission coefficients at nonideal semiconductor interfaces characterized by a spatial distribution of barrier heights,” Journal of Chemical Physics, vol. 115, no. 1, pp. 433–445, 2001. View at Publisher · View at Google Scholar
  45. S. Karatas and A. Türüt, “The determination of interface state energy distribution of the H-terminated Zn/p-type Si Schottky diodes with high series resistance by the admittance spectroscopy,” Vacuum, vol. 74, no. 1, pp. 45–53, 2004. View at Publisher · View at Google Scholar
  46. S. Aydogan, M. Saglam, and A. Türüt, “Some electrical properties of polyaniline/p-Si/Al structure at 300 K and 77 K temperatures,” Microelectronic Engineering, vol. 85, no. 2, pp. 278–283, 2008. View at Publisher · View at Google Scholar
  47. M. Çakar, N. Yıldırım, H. Doğan, and A. Türüt, “The conductance and capacitance-frequency characteristics of Au/pyronine-B/p-type Si/Al contacts,” Applied Surface Science, vol. 253, no. 7, pp. 3464–3468, 2007. View at Publisher · View at Google Scholar
  48. F. Parlaktürk, S. Altindal, A. Tataroğlu, M. Parlak, and A. Agasiev, “On the profile of frequency dependent series resistance and surface states in Au/Bi4Ti3O12/SiO2/n-Si(MFIS) structures,” Microelectronic Engineering, vol. 85, no. 1, pp. 81–88, 2008. View at Publisher · View at Google Scholar