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International Journal of Photoenergy
Volume 2009, Article ID 767951, 6 pages
Research Article

Growth of GaN@InGaN Core-Shell and Au-GaN Hybrid Nanostructures for Energy Applications

1The Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory, 1-Cyclotron Road, Berkeley, CA 94720, USA
2Department of Chemistry, University of California at Berkeley, 1-Cyclotron Road, Berkeley, CA 94720, USA

Received 2 April 2009; Accepted 25 May 2009

Academic Editor: Mohamed Sabry Abdel-Mottaleb

Copyright © 2009 Tevye Kuykendall et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


We demonstrated a method to control the bandgap energy of GaN nanowires by forming GaN@InGaN core-shell hybrid structures using metal organic chemical vapor deposition (MOCVD). Furthermore, we show the growth of Au nanoparticles on the surface of GaN nanowires in solution at room temperature. The work shown here is a first step toward engineering properties that are crucial for the rational design and synthesis of a new class of photocatalytic materials. The hybrid structures were characterized by various techniques, including photoluminescence (PL), energy dispersive x-ray spectroscopy (EDS), transmission and scanning electron microscopy (TEM and SEM), and x-ray diffraction (XRD).