Table of Contents Author Guidelines Submit a Manuscript
International Journal of Photoenergy
Volume 2010, Article ID 268035, 6 pages
Research Article

Investigation of Low-Cost Surface Processing Techniques for Large-Size Multicrystalline Silicon Solar Cells

1Department of Electrical Engineering, National Taiwan Ocean University, No. 2 Pei-ning Rd., Keelung 20224, Taiwan
2Photovoltaics Technology Center, Industrial Technology Research Institute, No. 195 Chung Hsing Rd., 4 Sec. Chu Tung, Hsin Chu 31061, Taiwan
3Department of Microelectronic Engineering, National Kaohsiung Marine University, No. 142 Haijhuan Rd., Kaohsiung 81143, Taiwan
4Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095, USA

Received 2 January 2010; Revised 8 March 2010; Accepted 13 March 2010

Academic Editor: Mario Pagliaro

Copyright © 2010 Yuang-Tung Cheng et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of 125×125mm2 were acid etched to produce simultaneously POCl3 emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc) is 616 mV, short circuit current (Jsc) is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.