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International Journal of Photoenergy
Volume 2010, Article ID 468147, 19 pages
Review Article

Progress in Polycrystalline Thin-Film Cu(In,Ga) Solar Cells

School of Electronics Engineering, KIIT University, Campus-3 (Kathjodi), Patia Bhubaneswar 751024, India

Received 7 January 2010; Revised 21 May 2010; Accepted 30 June 2010

Academic Editor: Gaetano Di Marco

Copyright © 2010 Udai P. Singh and Surya P. Patra. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


For some time, the chalcopyrite semiconductor CuInSe2 and its alloy with Ga and/or S [Cu(InGa)Se2 or Cu(InGa)(Se,S)2], commonly referred as CIGS, have been leading thin-film material candidates for incorporation in high-efficiency photovoltaic devices. CuInSe2-based solar cells have shown long-term stability and the highest conversion efficiencies among all thin-film solar cells, reaching 20%. A variety of methods have been reported to prepare CIGS thin film. Efficiency of solar cells depends upon the various deposition methods as they control optoelectronic properties of the layers and interfaces. CIGS thin film grown on glass or flexible (metal foil, polyimide) substrates require p-type absorber layers of optimum optoelectronic properties and n-type wideband gap partner layers to form the p-n junction. Transparent conducting oxide and specific metal layers are used for front and back contacts. Progress made in the field of CIGS solar cell in recent years has been reviewed.