Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling

Table 1

Material parameters used in simulation.

Parameter	n-SnO2	n-ZnO/n-Zn2SnO4	n-CdS	p-CdTe	ZnTe/Sb2Te3/As2Te3	Comments and references
Thickness, 𝑊 (μm)	0.01–0.5	0.02–0.5	0.025–0.2	0.1–6.0	0.01–0.5	Variable values
Dielectric constant, 𝜀/𝜀𝑜	9.0	9.0	10.0	9.4	14/55/20	[9, 10, 12, 13]
Electron mobility, 𝜇e (cm^2/Vs)	100	100/32	100	320	70/1094/500	[10, 12, 14, 15]
Hole mobility, 𝜇p (cm^2/Vs)	25	25/03	25	40	50/320/210	[10, 12, 14, 15]
Electron and hole concentration, n, p (cm^−3)	10^17	10^19	10^17	5×10^15	7.5×10^19	[12, 16, 17]
Bandgap, 𝐸g (eV)	3.6	3.0/3.35	2.42	1.45	2.25/0.3/0.6	[12, 16, 17]
Density of states at conduction band, 𝑁c (cm^−3)	2.2×10^18	2.0×10^18	2.2×10^18	8.0×10^17	7.5×10^17	[12, 16–18]
Density of states at valence band, 𝑁v (cm^−3)	1.8×10^19	1.5×10^19	1.8×10^19	1.8×10^19	1.5×10^19	[12, 16–18]
Electron affinity, χ (eV)	4.50	4.35/4.50	4.50	4.28	3.65/4.15/4.0	[12, 14–18]