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International Journal of Photoenergy
Volume 2010 (2010), Article ID 902385, 9 pages
http://dx.doi.org/10.1155/2010/902385
Research Article

Preparation of a Counter Electrode with P-Type NiO and Its Applications in Dye-Sensitized Solar Cell

1Research Center of Solar Photo-Electricity Applications, National Pingtung University of Science and Technology, Pingtung 912, Taiwan
2Powder Technology R&D Laboratory, Department of Mechanical Engineering, National Pingtung University of Science and Technology, Pingtung 912, Taiwan
3Department of Materials Engineering, National Pingtung University of Science and Technology, Pingtung 912, Taiwan

Received 30 November 2009; Revised 20 March 2010; Accepted 10 May 2010

Academic Editor: Stephen M. Goodnick

Copyright © 2010 Chuen-Shii Chou et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

This study investigates the applicability of a counter electrode with a P-type semiconductor oxide (such as NiO) on a dye-sensitized solar cell (DSSC). The counter electrode is fabricated by depositing an NiO film on top of a Pt film, which has been deposited on a Fluorine-doped tin oxide (FTO) glass using an ion-sputtering coater (or E-beam evaporator), using a simple spin coating method. This study also examines the effect of the average thickness of TiO2 film deposited on a working electrode upon the power conversion efficiency of a DSSC. This study shows that the power conversion efficiency of a DSSC with a Pt(E)/NiO counter electrode (4.28%) substantially exceeds that of a conventional DSSC with a Pt(E) counter electrode (3.16%) on which a Pt film was deposited using an E-beam evaporator. This result is attributed to the fact that the NiO film coated on the Pt(E) counter electrode improves the electrocatalytic activity of the counter electrode.