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International Journal of Photoenergy
Volume 2011, Article ID 158065, 5 pages
Research Article

Indium-Doped Zinc Oxide Thin Films as Effective Anodes of Organic Photovoltaic Devices

Key Laboratory of Photo-Electronics Thin Film Devices and Technique of Tianjin, Institute of Photo-Electronic Thin Film Device and Technique of Nankai University, Key Laboratory of Opto-Electronic Information Science and Technology for Ministry of Education, Tianjin 300071, China

Received 29 June 2011; Revised 31 August 2011; Accepted 5 September 2011

Academic Editor: Gaetano Di Marco

Copyright © 2011 Ziyang Hu et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Indium-doped zinc oxide (IZO) thin films were prepared by low-cost ultrasonic spray pyrolysis (USP). Both a low resistivity ( cm) and an average direct transmittance ( nm) about 80% of the IZO films were achieved. The IZO films were investigated as anodes in bulk-heterojunction organic photovoltaic (OPV) devices based on poly(3-hexylthiophene) and [6,6]-phenyl C61-butyric acid methyl ester. The device fabricated on IZO film-coated glass substrate showed an open circuit voltage of 0.56 V, a short circuit current of 8.49 mA cm−2, a fill factor of 0.40, and a power conversion efficiency of 1.91%, demonstrating that the IZO films prepared by USP technique are promising low In content and transparent electrode candidates of low-cost OPV devices.