Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts
Figure 2
Thickness variation of ribbon-type Si wafers depending on the substrate temperature preheated at the range of 700–1000°C at the constant time interval of 2.5 sec, moving velocity of the substrate of 485 cm/min, and blowing rate of Ar gas of 0.8 Nm3/h.
