Effect of Processing Parameters on Thickness of Columnar Structured Silicon Wafers Directly Grown from Silicon Melts
Figure 6
Optical microscope images for (a) surface and (b) cross section of as-grown ribbon-type silicon wafers at a substrate temperature of 1000°C, time interval of 2.5 sec, moving velocity of substrates of 485 cm/min, and blowing rate of Ar gas of 0.8 Nm3/h.
