Preparation and Characterization of Cu(In,Ga)Se<sub>2</sub> Thin Films by Selenization of Cu<sub>0.8</sub>Ga<sub>0.2</sub> and In<sub>2</sub>Se<sub>3</sub> Precursor Films

<table> (a) XRD patterns of CIGS films selenized from Cu-rich precursor films at different selenization temperatures for 30 min. (b) Detailed XRD plots of the (204/220) peaks. JCPDS (Joint Committee on Powder Diffraction Standards) Numbers 42-1120, 29-0914, 40-1487, and 35-1102 are referred to for Mo, MoSe<sub>2</sub>, CuInSe<sub>2</sub>, and CuIn<sub>0.7</sub>Ga<sub>0.3</sub>Se<sub>2</sub>, respectively.</table>

International Journal of Photoenergy

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Figure 2

Figure 2: Preparation and Characterization of Cu(In,Ga)Se<sub>2</sub> Thin Films by Selenization of Cu<sub>0.8</sub>Ga<sub>0.2</sub> and In<sub>2</sub>Se<sub>3</sub> Precursor Films 

International Journal of Photoenergy

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Figure 2

Preparation and Characterization of Cu(In,Ga)Se₂ Thin Films by Selenization of Cu_0.8Ga_0.2 and In₂Se₃ Precursor Films