International Journal of Photoenergy / 2012 / Article / Fig 2

Research Article

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Figure 2

(a) XRD patterns of CIGS films selenized from Cu-rich precursor films at different selenization temperatures for 30 min. (b) Detailed XRD plots of the (204/220) peaks. JCPDS (Joint Committee on Powder Diffraction Standards) Numbers 42-1120, 29-0914, 40-1487, and 35-1102 are referred to for Mo, MoSe2, CuInSe2, and CuIn0.7Ga0.3Se2, respectively.

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