Preparation and Characterization of Cu(In,Ga)Se<sub>2</sub> Thin Films by Selenization of Cu<sub>0.8</sub>Ga<sub>0.2</sub> and In<sub>2</sub>Se<sub>3</sub> Precursor Films

<table>Raman spectra of CIGS films selenized at different selenization temperatures for 30 min from (a) Cu-rich precursor films, and (b) Cu-poor precursor films.</table>

International Journal of Photoenergy

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Figure 3

Figure 3: Preparation and Characterization of Cu(In,Ga)Se<sub>2</sub> Thin Films by Selenization of Cu<sub>0.8</sub>Ga<sub>0.2</sub> and In<sub>2</sub>Se<sub>3</sub> Precursor Films 

International Journal of Photoenergy

Preparation and Characterization of Cu(In,Ga)Se2 Thin Films by Selenization of Cu0.8Ga0.2 and In2Se3 Precursor Films

Figure 3

Preparation and Characterization of Cu(In,Ga)Se₂ Thin Films by Selenization of Cu_0.8Ga_0.2 and In₂Se₃ Precursor Films